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Researchers develop high-performance heterojunction pn diodesA research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...
Recently, a team from the University of Science and Technology of China (USTC), led by Haiding Sun, has demonstrated a ...
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