Etching of SiC is another critical technology. Due to SiC’s high bonding energy and chemical inertness, etching is challenging. Wet etching and dry etching methods have their own characteristics ...

Traditionally, wet chemical processes were critical in a pattern defining ... These results demonstrate that the trenches created by plasma etching on the SiC platform are well suited for fabricating ...

A chemical etching method for widening the pores of metal-organic frameworks (MOFs) could improve various applications of MOFs, including in fuel cells and as catalysts. Researchers at Nagoya ...

If SiC substrate manufacturers can implement ... it will not only reduce the usage of harmful chemical solutions associated with KOH etching but also allows for the early detection of defects.