Hu Weijin from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences has discovered that single-domain ...

Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to ...

Crucially, the crystal structure of HfO 2 allows it to be deposited in ultra-thin films, meaning it may prove invaluable for next-generation technologies. Ferroelectric properties stem from the ...

The technique provides a starting point for the cost-efficient production of ferroelectric nylon thin films using commercially-available materials. Such films could find a wide range of applications ...

Imagine a thin film, just nanometers thick, that could store gigabytes of data—enough for movies, video games, and videos. This is the exciting potential of ferroelectric materials for memory ...

“One of the exciting things we found was that when the thin films were in the range where there were both ferroelectric and antiferroelectric regions, we could make the antiferroelectric regions ...

The theory that oxide electrodes destabilise ferroelectric phenomena called flux-closure domains (FCDs) in ferroelectric thin films has been disproved by researchers at the Chinese Academy of Sciences ...

Molecular ferroelectric thin films through in-plane liquid phase growth, exhibiting the pronounced ferroelectric performance with the Curie temperature ∼373 K. (Image: Dr. Z. Zhang and Mr. P. Li) ...

Their research, titled "Thin film ferroelectric photonic-electronic memory," was published in the journal Light: Science & Applications. Postdoc Zhang Gong and PhD student Chen Yue were the co ...

The work is detailed in a paper, "Ferroelectric Domain Wall Motion in Freestanding Single Crystal Complex Oxide Thin Film," recently published in the journal Advanced Materials. Using scanning ...