Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

In a type-I heterojunction, the band gap of one semiconductor is completely contained ... Type-I heterojunctions are commonly formed using materials like gallium nitride (GaN) and gallium arsenide ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.