Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...

Beijing's push to dominate third-generation semiconductor technology is taking shape along divergent paths, with silicon ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN) transistors, which exhibit excellent thermal stability, high efficiency, high power and a compact form factor. Combining ...

Chhattisgarh Chief Minister Vishnu Deo Sai on Friday laid the foundation stone for the country's first Ultra-edge techno ...

Get Instant Summarized Text (Gist) Wafer-scale hexagonal boron nitride (hBN) with an AA-stacking configuration has been synthesized using metal-organic chemical vapor deposition (MOCVD) on gallium ...