STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si).

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

Innoscience is a Chinese manufacturer of GaN-on-Si (gallium nitride on silicon ... Power & Discrete, MEMS and Sensors of STMicroelectronics. Retail sentiment on Stocktwits around STMicro remained ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN) transistors, which exhibit excellent thermal stability, high efficiency, high power and a compact form factor. Combining ...

02577.HK), the world leader in 8” GaN-on-Si (gallium nitride on silicon) high-performance low-cost manufacturing, announce the signature of an agreement on GaN technology development and ...