Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

TagoreTech Inc., a US innovator in radio frequency solutions, targets a threefold revenue increase in four years. Through ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

Partnership strengthens the domestic supply chain of Polar Semiconductor, and enhances access of this dual-use technology to ...

Chhattisgarh launches India’s first Gallium Nitride (GaN) semiconductor unit, aiming to become a tech powerhouse. With a Rs 1 ...

Raipur: The foundation stone for India’s first Gallium Nitride (GaN)-based semiconductor manufacturing plant of chip-making ...

Navitas Semiconductor has achieved a significant milestone in the electric vehicle sector by securing automotive qualification for its high-power GaNSafe™ integrated circuits (ICs), which meet ...

Gallium Nitride (GaN) is next-generation semiconductor material critical for India’s future in 5G/6G, defense, electric ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and ...