EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

STMicroelectronics’ VIPerGaN65D flyback converter, with its SOIC16 outline, permits extremely small and economical power ...

Gallium nitride (GaN) is a wide bandgap semiconductor that enables higher power density and more efficiency than traditional silicon metal-oxide semiconductor field-effect transistors (MOSFETs ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

These two CoolGaN G3 transistors, compatible with industry-standard silicon MOSFET packages, enable easy multi-sourcing ... Their new packages, combined with GaN technology, ensure low-resistance ...

The 1200V GaN device delivers greater than 99 percent efficiency and performs well against a leading SiC MOSFET of similar on-resistance. Partially funded by the ARPA-E CIRCUITS program ...

This is a shame because GaN transistors are faster, are physically smaller, have less gate capacitance and less (zero) reverse recovery charge compared to similar silicon mosfets. To make them ...

Navitas Semiconductor will showcase GaN and SiC technology advancements ... Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and ...

Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center ... Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC ...