A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

A world-first N-polar GaN wafer created by Chinese scientists could ... autonomous vehicles and radar systems, due to its exceptional physical properties. Do you have questions about the biggest ...