The single-crystal GaN substrates are 500 microns thick and have ... Until now, there were no GaN substrates available for commercial use, Kyma said. High-purity gallium-nitride substrates allow ...

The research team has developed a GaN crystal manufacturing device that achieves high speed, high quality, and continuous growth. Gallium nitride (GaN) crystal is a semiconductor widely used as a ...

They are convinced that the high growth rate and crystal quality of GaN using REMOCVD will soon replace the MOCVD method. "At cLPS, we have grown GaN, aluminum nitride, indium nitride, and ...

In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

In a study published in the journal Applied Physics Letters researchers from Osaka University evaluated the efficiency of high-purity GaN crystals using nondestructive and non-contact testing.

Huge strides have been made in the development of highly efficient electronic and optical devices, e.g. ultraviolet, blue, and white light-emitting diodes (LEDs) as well as high-frequency ...

The research team has developed a GaN crystal manufacturing device that achieves high speed, high quality, and continuous growth. Gallium nitride (GaN) crystal is a semiconductor widely used as a blue ...