architecture with hybrid bonding, a first for Samsung. The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die ...

Hybrid bonding orders included two high-bandwidth memory makers, likely SK Hynix and Samsung, and two leading logic manufacturers in Asia and the US, likely Taiwan Semiconductor Manufacturing ...

One prominent advancement in this field is the 3D Cu-Cu Hybrid Bonding technology, which offers a transformative solution. IDTechEx have been closely monitoring the advancements in 2.5D and 3D ...