Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

6/3/2003 Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters To meet the requirement for greater integration of devices and ever-smaller 6/3/2003 Single Die MOSFET and Schottky ...

The SiE726DF emerges as the industry's first 30V monolithic power MOSFET with integrated Schottky diode in a package with top and bottom heat dissipation paths. Available in the company’s ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...