One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Unprecedented reliability combined with superior performance & optimized, high-creepage package sets a new benchmark in ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Silicon microchips underpin our modern lives. They are at the heart of our smartphones and laptops. They also play critical ...

Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...

China Resources Microelectronics Ltd. (CR Micro) reported steady gains in its 2024 annual and 2025 first-quarter results, underscoring resilience in a volatile chip market. Full-year revenue rose 2.2% ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

Gallium nitride (GaN) semiconductors are central to improving ... which is critical for wide-bandgap materials such as GaN and SiC. Additional capabilities include nitride film deposition (e.g ...

next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today announced actions by its board of directors to ...

next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, will be exhibiting several GaN and SiC breakthroughs in AI ...