To create p-type SiC, it has to be doped with aluminium (usually), by epitaxial growth or ion implantation – both of which can cause defects that alter the way the devices drift layer works.

making reliable SiC devices on silicon substrates more achievable. An additional constraint for GaN is the lack of robust area-specific doping. In silicon and silicon carbide, ion implantation allows ...

manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips. The company has been a beneficiary of an upcycle in Silicon Carbide (SiC ...