Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed and efficiency are critical. The devices ...
It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...
APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high-frequency applications ...
"Our SiC MOSFETs and Schottky Barrier Diodes are being exported to over six countries, showcasing our commitment to delivering high-performance solutions globally," said Prithvideep Singh ...
today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...
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